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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF5P21180/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz, Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 38 Watts Avg. Power Gain -- 14 dB Efficiency -- 25.5% IM3 -- 37.5 dBc ACPR -- -41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Qualified Up to a Maximum of 32 VDD Operation N-Channel Enhancement-Mode Lateral MOSFET MRF5P21180 2170 MHz, 38 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFET CASE 375D-04, STYLE 1 NI-1230 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 437.5 2.5 -65 to +150 200 Unit Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 180 W CW Case Temperature 80C, 38 W CW Symbol RJC Max 0.43 0.47 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA MRF5P21180 1 ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 800 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.7 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- 2.8 3.6 0.26 5 3.5 -- 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz and f2 +5 MHz.) Input Return Loss (VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 800 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12.5 14 -- dB 23 25.5 -- % IM3 -- -37.5 -35 dBc ACPR -- -41 -38 dBc IRL -- -14 -9 dB (1) Each side of device measured separately. Part is internally matched both on input and output. (2) Measurements made with device in push-pull configuration. MRF5P21180 2 MOTOROLA RF DEVICE DATA VGG R1 + C23 C13 R2 Z15 C11 C5 Z11 Z3 Z5 C1 Z7 Z9 DUT Z4 C2 Z6 Z8 Z10 Z14 Z18 C3 Z16 + C24 C14 C12 C6 C7 Z13 C8 + C9 C16 + C18 + C19 + VDD C20 Z17 C4 Z19 RF INPUT Z1 Z2 Z21 Z22 RF OUTPUT VGG R4 R5 R3 Z12 Z20 + C10 C15 + C17 + C21 + VDD C22 Z1, Z22 Z2, Z21 Z3, Z20 Z4, Z19 Z5, Z6 Z7, Z8 1.000 x 0.066 Microstrip 0.760 x 0.113 Microstrip 0.068 x 0.066 Microstrip 1.672 x 0.066 Microstrip 0.318 x 0.066 Microstrip 0.284 x 0.180 Microstrip Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 PCB 0.256 x 0.650 Microstrip 1.030 x 0.035 Microstrip 0.500 x 0.650 Microstrip 0.550 x 0.058 Microstrip 0.353 x 0.066 Microstrip Taconic RF-35, 0.030, r = 3.5 Figure 1. MRF5P21180 Test Circuit Schematic Table 1. MRF5P21180 Test Circuit Component Designations and Values Part C1, C2, C3, C4 C5, C6, C7, C8 C9, C10 C11, C12 C13, C14, C15, C16 C17, C18, C19, C20, C21, C22 C23, C24 R1, R2, R3, R4 R5 WB1, WB2, WB3, WB4 Description 30 pF Chip Capacitors 5.6 pF Chip Capacitors 10 F Tantalum Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 22 F Tantalum Capacitors 1.0 F Tantalum Capacitors 10 W, 1/8 W Chip Resistors 1.0 kW, 1/8 W Chip Resistor Wear Blocks 5 x 180 x 500 mil Brass Shim Motorola Value, P/N or DWG 100B300JCA500X 100B5R6JCA500X T495X106K035AS4394 100B102JCA500X CDR33BX104AKWS T491X226K035AS4394 T491C105M050 ATC ATC Kemet ATC Kemet Kemet Kemet Manufacturer MOTOROLA RF DEVICE DATA MRF5P21180 3 C23 VGG R1 C13 C11 R2 C5 C8 C9 C16 C18 C19 VDD C20 C1 CUT OUT AREA WB1 WB2 C2 WB3 WB4 C3 C22 C7 R5 R4 C24 R3 C14 C12 C6 C15 C17 C21 MRF5P21180 Rev 5 C10 C4 Figure 2. MRF5P21180 Test Circuit Component Layout MRF5P21180 4 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS Gps VDD = 28 Vdc, Pout = 38 W (Avg.), IDQ = 1600 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) , DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -10 -15 -20 -25 -30 -35 1200 mA 1600 mA 20 40 60 80 100 200 300 IRL, INPUT RETURN LOSS (dB) 15 14 13 G ps , POWER GAIN (dB) 12 11 10 9 8 7 6 5 2080 IM3 ACPR 2100 2120 2140 2160 2180 IRL 40 35 30 25 20 -20 -25 -30 -35 -40 -45 2200 f, FREQUENCY (MHz) Figure 3. 2-Carrier W-CDMA Broadband Performance 15 IDQ = 2400 mA G ps , POWER GAIN (dB) 14.5 14 13.5 13 12.5 2000 mA IM3, THIRD ORDER 1600 mA 1200 mA 800 mA VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing 20 40 60 80 100 200 300 Pout, OUTPUT POWER (WATTS) PEP INTERMODULATION DISTORTION (dBc) -20 -25 -30 -35 -40 -45 -50 VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurement, 10 MHz Tone Spacing IDQ = 800 mA 2400 mA 2000 mA Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two-Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) -20 -25 Pout , OUTPUT POWER (dBm) -30 -35 -40 -45 -50 -55 -60 0.1 VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1600 mA Two-Tone Measurements, Center Frequency = 2140 MHz 1 TWO-TONE SPACING (MHz) 10 20 30 5th Order 7th Order 3rd Order 58 56 54 52 50 48 46 44 42 30 32 34 VDD = 28 Vdc, IDQ = 1600 mA Pulsed CW, 5 sec (on), 1 msec (off) Center Frequency = 2140 MHz 36 38 40 42 Pin, INPUT POWER (dBm) Ideal P3dB = 53.72 dBm (236 W) P1dB = 52.99 dBm (199 W) Actual Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF5P21180 5 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 15 10 5 0 4 -30 -35 IM3 -40 -45 -50 50 -55 IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 1600 mA f1 = 2135 MHz, f2 = 2145 MHz 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) -15 -20 -25 -20 -30 -40 -50 -60 (dB) -70 -80 -90 -100 -110 -120 -25 3.84 MHz Channel BW Gps ACPR -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -20 -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 6 8 10 30 Pout, OUTPUT POWER (WATTS) W-CDMA f, FREQUENCY (MHz) Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. 2-Carrier W-CDMA Spectrum 100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 1010 MTBF FACTOR (HOURS x AMPS 2 ) 0 2 4 6 8 10 109 108 107 100 120 140 160 180 200 220 PEAK-TO-AVERAGE (dB) TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 10. CCDF W-CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal Figure 11. MTBF Factor versus Junction Temperature MRF5P21180 6 MOTOROLA RF DEVICE DATA Zo = 25 Zload* f = 2110 MHz f = 2170 MHz f = 2110 MHz f = 2170 MHz Zsource VDD = 28 V, IDQ = 2 x 800 mA, Pout = 38 W Avg. f MHz 2110 2140 2170 Zsource 5.39 - j13.89 5.66 - j13.99 5.53 - j14.51 Zload 3.69 - j10.51 3.81 - j10.66 3.79 - j11.05 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 12. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF5P21180 7 PACKAGE DIMENSIONS Q bbb B 2 M 2X A A G4 L 1 TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF 3 4X 4 K aaa M 4X (FLANGE) M B D TA B M ccc ccc M M TA (LID) M B M TA N (LID) M B M R H C F E PIN 5 M (INSULATOR) bbb M T SEATING PLANE (INSULATOR) S bbb M TA M B M TA M B M CASE 375D-04 ISSUE C NI-1230 STYLE 1: PIN 1. 2. 3. 4. 5. Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5P21180 8 MOTOROLA RF DEVICE DATA MRF5P21180/D |
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